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LMV344ID 运算放大器
LMV344ID 运算放大器
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LMV344ID 运算放大器

型号/规格:

LMV344ID

品牌/商标:

德州仪器

封装形式:

贴片

年份:

最新年份

包装数量:

最小包装

产品信息

产品简介:

The LMV34x devices are single, dual, and quad CMOS operational amplifiers, respectively, with low voltage, low power, and rail-to-rail output swing capabilities. The PMOS input stage offers an ultra-low input bias current of 1 pA (typical) and an offset voltage of 0.25 mV (typical). The single-supply amplifier is designed specifically for low-voltage (2.7 V to 5 V) operation, with a wide common-mode input voltage range that typically extends from –0.2 V to 0.8 V from the positive supply rail. The LMV341 (single) also offers a shutdown (SHDN) pin that can be used to disable the device. In shutdown mode, the supply current is reduced to 33 nA (typical). Additional features of the family are a 20-nV/√Hz voltage noise at 10 kHz, 1-MHz unity-gain bandwidth, 1-V/μs slew rate, and 100-μA current consumption per channel.

Offered in both the SOT-23 and smaller SC70 packages, the LMV341 is suitable for the most space-constraint applications. The LMV342 dual device is offered in the standard SOIC and VSSOP packages. An extended industrial temperature range from –40°C to 125°C makes these devices suitable in a wide variety of commercial and industrial environments.

特征介绍:

  • 2.7-V and 5-V Performance
  • Rail-to-Rail Output Swing
  • Input Bias Current:1 pA (Typical)
  • Input Offset Voltage: 0.25 mV (Typical)
  • Low Supply Current: 100 μA (Typical)
  • Low Shutdown Current: 45 pA (Typical)
  • Gain Bandwidth of 1 MHz (Typical)
  • Slew Rate: 1 V/μs (Typical)
  • Turnon Time From Shutdown: 5 μs (Typical)
  • Input Referred Voltage Noise (at 10 kHz):
    20 nV/√Hz
  • ESD Protection Exceeds JESD 22
    • 2000-V Human-Body Model (HBM)
    • 750-V Charged-device model (CDM)

技术参数:

Number of channels (#)4Total supply voltage (Max) (+5V=5, +/-5V=10)5.5Total supply voltage (Min) (+5V=5, +/-5V=10)2.5Rail-to-railIn to V-, OutGBW (Typ) (MHz)1Slew rate (Typ) (V/us)1Vos (offset voltage @ 25 C) (Max) (mV)5Iq per channel (Typ) (mA)0.107Vn at 1 kHz (Typ) (nV/rtHz)39RatingCatalogOperating temperature range (C)-40 to 125Offset drift (Typ) (uV/C)1.9FeaturesInput bias current (Max) (pA)200CMRR (Typ) (dB)86Output current (Typ) (mA)75ArchitectureCMOS

应用领域: